Allgemein
| Rds On (Max) @ Id, Vgs | 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V |
|---|---|
| Basis-Teilenummer | TSM6502 |
| Konfiguration | N and P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 10.3nC @ 4.5V, 9.5nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1159pF @ 30V, 930pF @ 30V |
| Hersteller | Taiwan Semiconductor Corporation |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |