Taiwan Semiconductor Corporation
MOSFET 2N-CH 30V 107A 8DFN
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 11.7mOhm @ 10A, 10V, 3.6mOhm @ 20A, 10V |
|---|---|
| Basis-Teilenummer | TSM5055 |
| Konfiguration | 2 N-Channel (Dual) Asymmetrical |
| Gate Charge (Qg) (Max) @ Vgs | 9.3nC @ 10V, 49nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 555pF @ 15V, 2550pF @ 15V |
| Hersteller | Taiwan Semiconductor Corporation |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Drain-Source-Spannung | 30V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 38A (Tc), 20A (Ta), 107A (Tc) |
| Power - Max | 2.2W (Ta), 30W (Tc), 2.4W (Ta), 69W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 8-PowerTDFN |
| Hersteller-Gehäuse | 8-PDFN (5x6) |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|