Taiwan Semiconductor Corporation
MOSFET 2N-CH 30V 5.9A 8SOP
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 36mOhm @ 5.9A, 10V |
|---|---|
| Basis-Teilenummer | TSM4936 |
| Konfiguration | 2 N-Channel |
| FET Feature | Standard |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 610pF @ 15V |
| Hersteller | Taiwan Semiconductor Corporation |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Drain-Source-Spannung | 30V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5.9A (Ta) |
| Power - Max | 3W (Ta) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Hersteller-Gehäuse | 8-SOP |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|