Taiwan Semiconductor Corporation
60V, -20A, SINGLE P-CHANNEL POW
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 48mOhm @ 8A, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 22.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1250 pF @ 30 V |
| Hersteller | Taiwan Semiconductor Corporation |
| Montageart | Through Hole |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Drain-Source-Spannung | 60 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-251-3 Stub Leads, IPak |
| Hersteller-Gehäuse | TO-251S (I-PAK SL) |
| Betriebstemperatur | -50°C ~ 150°C (TJ) |
|---|