Taiwan Semiconductor Corporation
30V, -5.7A, SINGLE P-CHANNEL PO
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 48mOhm @ 5.3A, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 18.09 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1047.98 pF @ 15 V |
| Hersteller | Taiwan Semiconductor Corporation |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Drain-Source-Spannung | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Ta) |
| Max. Verlustleistung | 1.6W (Ta) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | SOT-23-6 |
| Hersteller-Gehäuse | SOT-26 |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|