Taiwan Semiconductor Corporation
20V, 5.3A, SINGLE N-CHANNEL POWE
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 33mOhm @ 5.3A, 4.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 12.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 10 V |
| Hersteller | Taiwan Semiconductor Corporation |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Drain-Source-Spannung | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A (Tc) |
| Max. Verlustleistung | 2W (Ta) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | SOT-23-6 |
| Hersteller-Gehäuse | SOT-26 |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|