Taiwan Semiconductor Corporation
MOSFET P-CH 20V 4.5A 6TDFN
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 94mOhm @ 2.8A, 4.5V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5.2 pF @ 6 V |
| Hersteller | Taiwan Semiconductor Corporation |
| Montageart | Surface Mount |
| Product Status | Not For New Designs |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 500mV @ 250µA (Min) |
| Drain-Source-Spannung | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Max. Verlustleistung | 6.5W (Tc) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 6-VDFN Exposed Pad |
| Hersteller-Gehäuse | 6-TDFN (2x2) |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
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