Taiwan Semiconductor Corporation
MOSFET 2N-CH 60V 0.22A SOT363
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 220mA, 10V |
|---|---|
| Basis-Teilenummer | TSM2N7002 |
| Konfiguration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 0.91nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 30pF @ 30V |
| Hersteller | Taiwan Semiconductor Corporation |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Drain-Source-Spannung | 60V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 220mA (Ta) |
| Power - Max | 240mW (Ta) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Hersteller-Gehäuse | SOT-363 |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|