Taiwan Semiconductor Corporation
MOSFET 2N-CH 30V 20A 8DFN
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 20mOhm @ 10A, 10V |
|---|---|
| Basis-Teilenummer | TSM200 |
| Konfiguration | 2 N-Channel |
| FET Feature | Standard |
| Gate Charge (Qg) (Max) @ Vgs | 4.1nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 345pF @ 25V |
| Hersteller | Taiwan Semiconductor Corporation |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Drain-Source-Spannung | 30V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Power - Max | 20W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 8-PowerWDFN |
| Hersteller-Gehäuse | 8-PDFN (3x3) |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|