Taiwan Semiconductor Corporation
MOSFET N-CH 40V 12A/54A 8PDFNU
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 11mOhm @ 12A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1352 pF @ 20 V |
| Hersteller | Taiwan Semiconductor Corporation |
| Montageart | Surface Mount, Wettable Flank |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA |
| Drain-Source-Spannung | 40 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 54A (Tc) |
| Max. Verlustleistung | 3.1W (Ta), 68W (Tc) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|
| Grade | Automotive |
|---|---|
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
| Qualification | AEC-Q101 |