Allgemein
| Capacitance @ Vr, F | 100pF @ 4V, 1MHz |
|---|---|
| Hersteller | Taiwan Semiconductor Corporation |
| Montageart | Through Hole |
| Product Status | Active |
| Reverse Recovery Time (trr) | 35 ns |
| Technologie | Standard |

Taiwan Semiconductor Corporation
35NS, 8A, 200V, SUPER FAST RECOV
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Capacitance @ Vr, F | 100pF @ 4V, 1MHz |
|---|---|
| Hersteller | Taiwan Semiconductor Corporation |
| Montageart | Through Hole |
| Product Status | Active |
| Reverse Recovery Time (trr) | 35 ns |
| Technologie | Standard |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 975 mV @ 8 A |
| Current - Average Rectified (Io) | 8A |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-220-2 |
| Hersteller-Gehäuse | TO-220AC |
| Grade | Automotive |
|---|---|
| Operating Temperature - Junction | -55°C ~ 150°C |
| Qualification | AEC-Q101 |