Allgemein
| Capacitance @ Vr, F | 110pF @ 4V, 1MHz |
|---|---|
| Hersteller | Taiwan Semiconductor Corporation |
| Montageart | Surface Mount |
| Product Status | Active |
| Reverse Recovery Time (trr) | 25 ns |
| Technologie | Standard |
Taiwan Semiconductor Corporation
PU6BCH
DatenblattAnalog & Leistungselektronik
DIODE GEN PURP 100V 6A DO214AB
Technische Spezifikationen
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
Elektrisch
| Voltage - DC Reverse (Vr) (Max) | 100 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 940 mV @ 6 A |
| Current - Average Rectified (Io) | 6A |
| Current - Reverse Leakage @ Vr | 2 µA @ 100 V |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
Mechanisch
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | DO-214AB, SMC |
| Hersteller-Gehäuse | DO-214AB (SMC) |
Umwelt
| Grade | Automotive |
|---|---|
| Operating Temperature - Junction | -55°C ~ 175°C |
| Qualification | AEC-Q101 |