Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SOD123F
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | HS1D |
|---|---|
| Capacitance @ Vr, F | 11pF @ 4V, 1MHz |
| Hersteller | Taiwan Semiconductor Corporation |
| Montageart | Surface Mount |
| Verpackung | Tape & Reel (TR) Cut Tape (CT) |
| Teilestatus | Aktiv |
| Reverse Recovery Time (trr) | 50 ns |
| Technologie | Standard |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 1 A |
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 5 µA @ 200 V |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Package / Case | SOD-123F |
|---|---|
| Hersteller-Gehäuse | SOD-123F |
| Operating Temperature - Junction | -55°C ~ 150°C |
|---|