Allgemein
| Basis-Teilenummer | ES2L |
|---|---|
| Capacitance @ Vr, F | 25pF @ 4V, 1MHz |
| Hersteller | Taiwan Semiconductor Corporation |
| Montageart | Surface Mount |
| Product Status | Active |
| Reverse Recovery Time (trr) | 35 ns |
| Technologie | Standard |

Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO214AA
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | ES2L |
|---|---|
| Capacitance @ Vr, F | 25pF @ 4V, 1MHz |
| Hersteller | Taiwan Semiconductor Corporation |
| Montageart | Surface Mount |
| Product Status | Active |
| Reverse Recovery Time (trr) | 35 ns |
| Technologie | Standard |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 940 mV @ 2 A |
| Current - Average Rectified (Io) | 2A |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | DO-214AA, SMB |
| Hersteller-Gehäuse | DO-214AA (SMB) |
| Operating Temperature - Junction | -55°C ~ 150°C |
|---|