Taiwan Semiconductor Corporation
60, -0.14, SINGLE P-CHANNEL
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 8Ohm @ 140mA, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 37 pF @ 30 V |
| Hersteller | Taiwan Semiconductor Corporation |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Drain-Source-Spannung | 60 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 140mA (Ta) |
| Max. Verlustleistung | 298mW (Ta) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | SC-70, SOT-323 |
| Hersteller-Gehäuse | SOT-323 |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|