Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 118mOhm @ 500mA, 6V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 6 V |
| Input Capacitance (Ciss) (Max) @ Vds | 110 pF @ 400 V |
| Hersteller | Tagore Technology |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | GaNFET (Gallium Nitride) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 11mA |
| Drain-Source-Spannung | 650 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 6V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 22-PowerVFQFN |
| Hersteller-Gehäuse | 22-QFN (5x7) |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|