Allgemein
| Rds On (Max) @ Id, Vgs | 160mOhm @ 10.5A, 10V |
|---|---|
| FET Type | N-Channel |
| Hersteller | STMicroelectronics |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Serie | FDmesh™ II |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±25V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 160mOhm @ 10.5A, 10V |
|---|---|
| FET Type | N-Channel |
| Hersteller | STMicroelectronics |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Serie | FDmesh™ II |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±25V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Drain-Source-Spannung | 600 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Max. Verlustleistung | 160W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-247-3 |
| Hersteller-Gehäuse | TO-247-3 |
| Grade | Automotive |
|---|---|
| Betriebstemperatur | 150°C (TJ) |
| Qualification | AEC-Q101 |