Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 80A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 15 V |
| Hersteller | STMicroelectronics |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Serie | STripFET™ II |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±15V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Drain-Source-Spannung | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Max. Verlustleistung | 210W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | PowerSO-10 Exposed Bottom Pad |
| Hersteller-Gehäuse | 10-PowerSO |
| Betriebstemperatur | 175°C(TJ) |
|---|