Allgemein
| Rds On (Max) @ Id, Vgs | 5.9mOhm @ 37.5A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 23.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2030 pF @ 25 V |
| Hersteller | STMicroelectronics |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Serie | DeepGATE™, STripFET™ VI |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |