Allgemein
| Rds On (Max) @ Id, Vgs | 3mOhm @ 60A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 183 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11400 pF @ 25 V |
| Hersteller | STMicroelectronics |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Serie | DeepGATE™, STripFET™ VI |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |