Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 80mOhm @ 2.1A, 4.5V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 2.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 412 pF @ 15 V |
| Hersteller | STMicroelectronics |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Serie | STripFET™ II |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Drain-Source-Spannung | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Tc) |
| Max. Verlustleistung | 2.5W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-261-4, TO-261AA |
| Hersteller-Gehäuse | SOT-223 |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|