Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 7.4mOhm @ 9A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 125 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6895 pF @ 25 V |
| Hersteller | STMicroelectronics |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Serie | DeepGATE™, STripFET™ VI |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | +21V, -16V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Drain-Source-Spannung | 80 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Max. Verlustleistung | 80W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 8-PowerVDFN |
| Hersteller-Gehäuse | PowerFlat™ (5x6) |
| Betriebstemperatur | -55°C~175°C(TJ) |
|---|