STL11N65M2

Name: STL11N65M2
Brand: STMicroelectronics

Analog & Leistungselektronik

MOSFET N-CH 650V POWERFLAT 5X5 H

ObsoletAnalog & Leistungselektronik

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.

Rds On (Max) @ Id, Vgs	670mOhm @ 3.5A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	410 pF @ 100 V
Hersteller	STMicroelectronics
Montageart	Surface Mount
Product Status	Obsolete
Technologie	MOSFET (Metal Oxide)
Vgs (Max)	±25V
Vgs(th) (Max) @ Id	4V @ 250µA

Drain-Source-Spannung	650 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	7A (Tc)
Max. Verlustleistung	85W (Tc)

Gehäuse	Tape & Reel (TR) Cut Tape (CT)

Betriebstemperatur	-55°C ~ 150°C (TA)