Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 10mOhm @ 40A, 10V |
|---|---|
| Basis-Teilenummer | STH80 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 28.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 25 V |
| Hersteller | STMicroelectronics |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | Automotive, AEC-Q101, STripFET™ |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Drain-Source-Spannung | 100 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Max. Verlustleistung | 110W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Hersteller-Gehäuse | H2Pak-2 |
| Betriebstemperatur | -55°C~175°C(TJ) |
|---|