Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 750mOhm @ 4A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1250 pF @ 50 V |
| Hersteller | STMicroelectronics |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Serie | SuperMESH3™ |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Drain-Source-Spannung | 620 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 8.4A (Tc) |
| Max. Verlustleistung | 30W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Hersteller-Gehäuse | TO-281 (I2PAKFP) |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|