Allgemein
| Rds On (Max) @ Id, Vgs | 200mOhm @ 10A, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 25 V |
| Hersteller | STMicroelectronics |
| Montageart | Through Hole |
| Verpackung | Tube |
| Teilestatus | Obsolet |
| Serie | STripFET™ II |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |