Allgemein
| Basis-Teilenummer | SGSD100 |
|---|---|
| Hersteller | STMicroelectronics |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Transistor Type | NPN - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 3.5V @ 80mA, 20A |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | SGSD100 |
|---|---|
| Hersteller | STMicroelectronics |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Transistor Type | NPN - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 3.5V @ 80mA, 20A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
|---|---|
| Current - Collector (Ic) (Max) | 25 A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 500 @ 10A, 3V |
| Power - Max | 130 W |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-247-3 |
| Hersteller-Gehäuse | TO-247-3 |