Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 30mOhm @ 50A, 18V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3540 pF @ 800 V |
| Hersteller | STMicroelectronics |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | SiCFET (Silicon Carbide) |
| Vgs (Max) | +22V, -10V |
| Vgs(th) (Max) @ Id | 4.9V @ 1mA |
| Drain-Source-Spannung | 1200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Max. Verlustleistung | 469W (Tc) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Hersteller-Gehäuse | H2PAK-7 |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
|---|