Allgemein
| Ausgangstyp | Phototransistor |
|---|---|
| Hersteller | Sharp Microelectronics |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Response Time | 20µs, 20µs |
| Sensing Distance | 0.028" (0.7mm) |
| Sensing Method | Reflective |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Ausgangstyp | Phototransistor |
|---|---|
| Hersteller | Sharp Microelectronics |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Response Time | 20µs, 20µs |
| Sensing Distance | 0.028" (0.7mm) |
| Sensing Method | Reflective |
| Voltage - Collector Emitter Breakdown (Max) | 35 V |
|---|---|
| Current - Collector (Ic) (Max) | 20 mA |
| Current - DC Forward (If) (Max) | 50 mA |
| Gehäuse | Tube |
|---|---|
| Package / Case | 4-SMD |
| Betriebstemperatur | -25°C ~ 85°C |
|---|