Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 81mOhm @ 12A, 18V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1498 pF @ 800 V |
| Hersteller | Rohm Semiconductor |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | SiCFET (Silicon Carbide) |
| Vgs (Max) | +21V, -4V |
| Vgs(th) (Max) @ Id | 4.8V @ 6.45mA |
| Drain-Source-Spannung | 1200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tj) |
| Max. Verlustleistung | 93W |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Hersteller-Gehäuse | TO-263-7L |
| Betriebstemperatur | 175°C (TJ) |
|---|