Allgemein
| Rds On (Max) @ Id, Vgs | 208mOhm @ 5A, 18V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 398 pF @ 800 V |
| Hersteller | Rohm Semiconductor |
| Montageart | Through Hole |
| Verpackung | Tube |
| Teilestatus | Aktiv |
| Technologie | SiCFET (Silicon Carbide) |
| Vgs (Max) | +22V, -4V |
| Vgs(th) (Max) @ Id | 5.6V @ 2.5mA |