Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 975mOhm @ 1.7A, 18V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 275 pF @ 800 V |
| Hersteller | Rohm Semiconductor |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | SiCFET (Silicon Carbide) |
| Vgs (Max) | +22V, -6V |
| Vgs(th) (Max) @ Id | 4V @ 630µA |
| Drain-Source-Spannung | 1700 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 5.9A (Tc) |
| Max. Verlustleistung | 57W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Hersteller-Gehäuse | TO-268 |
| Betriebstemperatur | 175°C(TJ) |
|---|