Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 364mOhm @ 4A, 18V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 667 pF @ 800 V |
| Hersteller | Rohm Semiconductor |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Technologie | SiCFET (Silicon Carbide) |
| Vgs (Max) | +22V, -6V |
| Vgs(th) (Max) @ Id | 4V @ 1.4mA |
| Drain-Source-Spannung | 1200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Max. Verlustleistung | 108W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-247-3 |
| Hersteller-Gehäuse | TO-247 |
| Betriebstemperatur | 175°C(TJ) |
|---|