Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 156mOhm @ 10A, 18V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 500 V |
| Hersteller | Rohm Semiconductor |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Technologie | SiCFET (Silicon Carbide) |
| Vgs (Max) | +22V, -6V |
| Vgs(th) (Max) @ Id | 4V @ 3.3mA |
| Drain-Source-Spannung | 650 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Max. Verlustleistung | 165W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-220-3 |
| Hersteller-Gehäuse | TO-220AB |
| Betriebstemperatur | 175°C(TJ) |
|---|