Allgemein
| Basis-Teilenummer | SCS220 |
|---|---|
| Capacitance @ Vr, F | 1060pF @ 1V, 1MHz |
| Hersteller | Rohm Semiconductor |
| Montageart | Through Hole |
| Verpackung | Tube |
| Teilestatus | Obsolet |
| Reverse Recovery Time (trr) | 0 ns |
| Technologie | SiC (Silicon Carbide) Schottky |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | SCS220 |
|---|---|
| Capacitance @ Vr, F | 1060pF @ 1V, 1MHz |
| Hersteller | Rohm Semiconductor |
| Montageart | Through Hole |
| Verpackung | Tube |
| Teilestatus | Obsolet |
| Reverse Recovery Time (trr) | 0 ns |
| Technologie | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 20 A |
| Current - Average Rectified (Io) | 20A |
| Current - Reverse Leakage @ Vr | 400 µA @ 1200 V |
| Geschwindigkeit | No Recovery Time > 500mA (Io) |
| Package / Case | TO-220-2 |
|---|---|
| Hersteller-Gehäuse | TO-220AC |
| Grade | Automotive |
|---|---|
| Operating Temperature - Junction | 175°C (Max) |
| Qualification | AEC-Q101 |