Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 200mA, 4.5V |
|---|---|
| Basis-Teilenummer | RYC002 |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 26 pF @ 10 V |
| Hersteller | Rohm Semiconductor |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 800mV @ 1mA |
| Drain-Source-Spannung | 50 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Max. Verlustleistung | 350mW (Tc) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Hersteller-Gehäuse | SST3 |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|