RSJ10HN06TL

Name: RSJ10HN06TL
Brand: Rohm Semiconductor

Analog & Leistungselektronik

MOSFET N-CH 60V 100A LPTS

ObsoletTO-263-3, D2PAK (2 Leads + Tab), TO-263ABAnalog & Leistungselektronik

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.

Rds On (Max) @ Id, Vgs	4.2mOhm @ 50A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	202 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	11000 pF @ 10 V
Hersteller	Rohm Semiconductor
Montageart	Surface Mount
Verpackung	Tape & Reel (TR) Cut Tape (CT)
Teilestatus	Obsolet
Technologie	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 1mA

Drain-Source-Spannung	60 V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Current - Continuous Drain (Id) @ 25°C	100A (Ta)
Max. Verlustleistung	100W (Tc)

Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Hersteller-Gehäuse	LPTS

Betriebstemperatur	150°C (TJ)