Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 350mOhm @ 1A, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.9 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 120 pF @ 10 V |
| Hersteller | Rohm Semiconductor |
| Montageart | Surface Mount |
| Product Status | Not For New Designs |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Drain-Source-Spannung | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Max. Verlustleistung | 800mW (Ta) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 3-SMD, Flat Leads |
| Hersteller-Gehäuse | TUMT3 |
| Betriebstemperatur | 150°C(TJ) |
|---|