Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 28.6mOhm @ 7A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 410 pF @ 15 V |
| Hersteller | Rohm Semiconductor |
| Montageart | Surface Mount |
| Product Status | Not For New Designs |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Drain-Source-Spannung | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Max. Verlustleistung | 2W (Ta) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 8-PowerUDFN |
| Hersteller-Gehäuse | HUML2020L8 |
| Betriebstemperatur | 150°C(TJ) |
|---|