Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 42.7mOhm @ 35A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 125 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6900 pF @ 25 V |
| Hersteller | Rohm Semiconductor |
| Montageart | Through Hole |
| Verpackung | Bulk |
| Teilestatus | Aktiv |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Drain-Source-Spannung | 200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Max. Verlustleistung | 2.23W (Ta), 40W (Tc) |
| Package / Case | TO-220-3 Full Pack |
|---|---|
| Hersteller-Gehäuse | TO-220FM |
| Betriebstemperatur | 150°C (TJ) |
|---|