Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 2.1Ohm @ 2.5A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 25 V |
| Hersteller | Rohm Semiconductor |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Drain-Source-Spannung | 800 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Max. Verlustleistung | 120W (Tc) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Hersteller-Gehäuse | TO-263S |
| Betriebstemperatur | 150°C (TJ) |
|---|