Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 81mOhm @ 23A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 25 V |
| Hersteller | Rohm Semiconductor |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Drain-Source-Spannung | 600 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 46A (Ta) |
| Max. Verlustleistung | 120W (Tc) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | TO-3P-3 Full Pack |
| Hersteller-Gehäuse | TO-3PF |
| Betriebstemperatur | 150°C(TJ) |
|---|