Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 135mOhm @ 2A, 10V |
|---|---|
| FET Feature | Schottky Diode (Isolated) |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 3.4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 310 pF @ 10 V |
| Hersteller | Rohm Semiconductor |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Drain-Source-Spannung | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Max. Verlustleistung | 1.25W (Ta) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | SOT-23-5 Thin, TSOT-23-5 |
| Hersteller-Gehäuse | TSMT5 |
| Betriebstemperatur | 150°C(TJ) |
|---|