HP8ME5TB1

Name: HP8ME5TB1
Brand: Rohm Semiconductor

Analog & Leistungselektronik

MOSFET N/P-CH 100V 3A/8.5A 8HSOP

Aktiv8-PowerTDFNAnalog & Leistungselektronik

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.

Rds On (Max) @ Id, Vgs	193mOhm @ 3A, 10V, 273mOhm @ 3A, 10V
Konfiguration	N and P-Channel
FET Feature	Standard
Gate Charge (Qg) (Max) @ Vgs	2.9nC @ 10V, 19.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	90pF @ 50V, 590pF @ 50V
Hersteller	Rohm Semiconductor
Montageart	Surface Mount
Product Status	Active
Technologie	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5V @ 1mA

Drain-Source-Spannung	100V
Current - Continuous Drain (Id) @ 25°C	3A (Ta), 8.5A (Tc), 3A (Ta), 8A (Tc)
Power - Max	3W (Ta), 20W (Tc)

Betriebstemperatur	150°C (TJ)