Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 98mOhm @ 1.9A, 5.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5.2 nC @ 6 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 400 V |
| Hersteller | Rohm Semiconductor |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | GaNFET (Gallium Nitride) |
| Vgs (Max) | +6V, -10V |
| Vgs(th) (Max) @ Id | 2.4V @ 18mA |
| Drain-Source-Spannung | 650 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 5.5V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Max. Verlustleistung | 56W (Tc) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 8-PowerDFN |
| Hersteller-Gehäuse | DFN8080K |
| Betriebstemperatur | 150°C (TJ) |
|---|