Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | DTB113 |
|---|---|
| Hersteller | Rohm Semiconductor |
| Montageart | Through Hole |
| Verpackung | Tape & Box (TB) |
| Teilestatus | Obsolet |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
|---|---|
| Current - Collector (Ic) (Max) | 500 mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 50mA, 5V |
| Power - Max | 300 mW |
| Frequency - Transition | 200 MHz |
| Package / Case | SC-72 Formed Leads |
|---|---|
| Hersteller-Gehäuse | SPT |