Renesas Electronics Corporation
MOSFET N-CH 30V 130A 8HVSON
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 1.82mOhm @ 39A, 4.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 257 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10850 pF @ 10 V |
| Hersteller | Renesas Electronics Corporation |
| Montageart | Surface Mount |
| Product Status | Last Time Buy |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Drain-Source-Spannung | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 130A (Tc) |
| Max. Verlustleistung | 1.5W (Ta), 83W (Tc) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 8-PowerVDFN |
| Hersteller-Gehäuse | 8-HVSON (5x5.4) |
| Betriebstemperatur | 150°C (TJ) |
|---|