Renesas Electronics Corporation
MOSFET N-CH 20V 7A 6HUSON
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 19.1mOhm @ 3.5A, 2.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 7.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 10 V |
| Hersteller | Renesas Electronics Corporation |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Drain-Source-Spannung | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Max. Verlustleistung | 2.4W (Ta) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 6-WFDFN Exposed Pad |
| Hersteller-Gehäuse | 6-HUSON (2x2) |
| Betriebstemperatur | 150°C (TJ) |
|---|