Renesas Electronics Corporation
MOSFET N-CH 20V 6A 8HUSON
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 20mOhm @ 3A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 10 V |
| Hersteller | Renesas Electronics Corporation |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Drain-Source-Spannung | 20 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Max. Verlustleistung | 1W (Ta) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | 8-WFDFN Exposed Pad |
| Hersteller-Gehäuse | 8-HUSON (2.7x2) |
| Betriebstemperatur | 150°C (TJ) |
|---|