Renesas Electronics Corporation
MOSFET P-CH 30V 3.3A 3MPAK
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 68mOhm @ 1.6A, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 625 pF @ 10 V |
| Hersteller | Renesas Electronics Corporation |
| Montageart | Surface Mount |
| Product Status | Last Time Buy |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | +10V, -20V |
| Drain-Source-Spannung | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Ta) |
| Max. Verlustleistung | 800mW (Ta) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Hersteller-Gehäuse | 3-MPAK |
| Betriebstemperatur | 150°C (TJ) |
|---|